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Volumn 2, Issue 20, 2008, Pages 957-964

Study of electrical characteristic of surface barrier detector with high series resistance

Author keywords

Metal semiconductor contact; Non ideality factor; Sedes resistance; Surface barrier detector

Indexed keywords


EID: 59849129848     PISSN: None     EISSN: 1313311     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (8)

References (10)
  • 1
    • 0022475219 scopus 로고
    • Some New Developments in the Field of High Atomic Number Materials, Nucl. Ins. Meth.phy. A
    • M. Cuzin, Some New Developments in the Field of High Atomic Number Materials, Nucl. Ins. Meth.phy. A, vol. 253, pp. 407-410, 1987.
    • (1987) , vol.253 , pp. 407-410
    • Cuzin, M.1
  • 2
    • 59849096206 scopus 로고
    • Ultra High Speed MSM Photodetectors for Optical Transmission Systems
    • Annual report, Institut für Hochfrequenztechnik, TU Braunschweig
    • M. Sickmöller, Ultra High Speed MSM Photodetectors for Optical Transmission Systems, Annual report, Institut für Hochfrequenztechnik, TU Braunschweig, 1994.
    • (1994)
    • Sickmöller, M.1
  • 3
    • 0034228429 scopus 로고    scopus 로고
    • Influence of Substrate on the Performances of Semi-Insulating GaAs Detectors, Nucl. Ins. Meth. Phy. A
    • R. Baldini, Influence of Substrate on the Performances of Semi-Insulating GaAs Detectors, Nucl. Ins. Meth. Phy. A, vol. 449, pp. 268-276, 2000.
    • (2000) , vol.449 , pp. 268-276
    • Baldini, R.1
  • 4
    • 0343982041 scopus 로고
    • Extraction of Schottky Diode Parameters from Forward Current-Voltage Characteristics
    • S. K. Cheung, Extraction of Schottky Diode Parameters from Forward Current-Voltage Characteristics, Appl. Phys. Lett., Vol. 49, 1986.
    • (1986) Appl. Phys. Lett , vol.49
    • Cheung, S.K.1
  • 5
    • 0031212785 scopus 로고    scopus 로고
    • Influence of Contacts and Substrate on Semi-Insulating GaAs Detectors, Nucl. Ins. Meth. Phy. A
    • R. Irsigler, Influence of Contacts and Substrate on Semi-Insulating GaAs Detectors, Nucl. Ins. Meth. Phy. A, vol. 395, pp.71-75, 1997.
    • (1997) , vol.395 , pp. 71-75
    • Irsigler, R.1
  • 6
    • 0012836461 scopus 로고
    • Bias Dependence of Schottky Barrier Height in GaAs from Internal Photoemission and Current-Voltage Characteristics
    • T. Ishida, and H. Ikoma, Bias Dependence of Schottky Barrier Height in GaAs from Internal Photoemission and Current-Voltage Characteristics, J. Appl. Phys. vol. 74, pp. 3977-3982, 1993.
    • (1993) J. Appl. Phys , vol.74 , pp. 3977-3982
    • Ishida, T.1    Ikoma, H.2
  • 7
    • 36449000058 scopus 로고
    • Barrier Inhomogeneities at Schottky Contacts
    • J. H. Werner, and H. H. Guttler, Barrier Inhomogeneities at Schottky Contacts, J. Appl. Phys. vol. 69, pp. 1522-1533, 1991.
    • (1991) J. Appl. Phys , vol.69 , pp. 1522-1533
    • Werner, J.H.1    Guttler, H.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.