High-pressure and high-temperature annealing of diamond ion-implanted with various elements

Diamond and Related Materials

Volumn 17, Issue 7-10, 2008, Pages 1269-1272

  Ueda, K ^a   Kasu, M ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Beryllium; Diamond; High pressure and high temperature; Ion implantation

Indexed keywords

AIR POLLUTION; ALUMINUM; ANNEALING; DIAMONDS; EMISSION SPECTROSCOPY; IONS; KETONES; MAGNESIUM PRINTING PLATES; PHONONS;

BERYLLIUM; BOUND EXCITONS; CATHODOLUMINESCENCE SPECTRA; DIAMOND; ENERGY DIFFERENCES; HIGH-PRESSURE AND HIGH-TEMPERATURE; HIGH-TEMPERATURE ANNEALING; ION-IMPLANTATION; OPTICAL PHONON ENERGIES; TEMPERATURE DEPENDENCES; ZERO PHONON LINES;

DIAMOND FILMS;

EID: 48849107625     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.01.054     Document Type: Article

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