Modified diffusion bonding for both Cu and SiO2 at 150 °c in ambient air

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2010, Pages 872-877

  Shigetou, Akitsu ^a   Suga, Tadatomo ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSOLUTE HUMIDITY; ADSORBATE LAYERS; ADSORPTION OF WATER; AMBIENT AIR; AMORPHOUS LAYER; ANALYSIS RESULTS; BOND MECHANISM; BOND QUALITY; BONDABILITY; BONDING METHODS; BONDING TECHNOLOGY; BOUND WATERS; BRIDGING LAYERS; CLEAN SURFACES; FAST ATOM BEAMS; GROWTH BEHAVIOR; HYDROXIDE HYDRATES; INFLUENCE OF WATER; INSULATION LAYERS; INTERFACIAL LAYER; LAYER THICKNESS; METAL ELECTRODES; NITROGEN GAS; OXYGEN GAS; RECRYSTALLIZATIONS; ROOM TEMPERATURE; SILANOL GROUPS; SINGLE PROCESS; TEM; THREE DIMENSIONAL INTEGRATION; WATER MOLECULE;

ADSORBATES; ADSORPTION; ATMOSPHERIC HUMIDITY; ATMOSPHERIC PRESSURE; BINDING ENERGY; HUMIDITY CONTROL; IONIZATION OF LIQUIDS; MOISTURE; OXYGEN; PLASMAS; SCANNING ELECTRON MICROSCOPY; SHEAR STRENGTH; SILICON COMPOUNDS; SURFACE CLEANING; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

MOLECULES;

EID: 77955185612     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490692     Document Type: Conference Paper

References (12)

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