Field-effect transistors using silicon nanowires prepared by electroless chemical etching

IEEE Electron Device Letters

Volumn 31, Issue 8, 2010, Pages 860-862

  Zaremba Tymieniecki, M ^a   Li, C ^a   Fobelets, K ^a   Durrani, Z A K ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Electroless chemical etching; nanoelectronics; nanowire MOSFET; silicon nanowire

Indexed keywords

BACK-GATE; CURRENT FLOWS; CURRENT SATURATION; ELECTROLESS CHEMICAL ETCHING; GATE FIELD; GATE TRANSISTORS; GATE VOLTAGES; MOS-FET; N-CHANNEL DEVICES; ON/OFF CURRENT RATIO; OUTPUT CHARACTERISTICS; SILICON NANOWIRES; SINGLE NANOWIRES; SUBTHRESHOLD SWING; TITANIUM SILICIDE; TOP-GATE;

ASPECT RATIO; DRAIN CURRENT; ETCHING; MOSFET DEVICES; NANOELECTRONICS; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; TITANIUM;

FIELD EFFECT TRANSISTORS;

EID: 77955166484     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2050572     Document Type: Article

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