Room-temperature annealing of vacancy-type defect in high-purity n -type Si

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 23, 2007, Pages

  Bleka, J H ^a   Monakhov, E V ^a   Svensson, B G ^a   Avset, B S ^b  

^a UNIVERSITY OF OSLO   (Norway)

^b SINTEF ICT   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 37649012759     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.233204     Document Type: Article

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