Defect-driven gain bistability in neutron damaged, silicon bipolar transistors

Applied Physics Letters

Volumn 90, Issue 17, 2007, Pages

  Fleming, R M ^a   Seager, C H ^a   Lang, D V ^a   Bielejec, E ^a   Campbell, J M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN BISTABILITY; N-P-N BIPOLAR TRANSISTORS; ROOM TEMPERATURE; TRANSISTOR GAIN;

CRYSTAL DEFECTS; GAIN CONTROL; NEUTRON IRRADIATION; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS;

BIPOLAR TRANSISTORS;

EID: 34248589758     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2731516     Document Type: Article

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