On the formation of the L-centre in silicon during heat treatment in the temperature range 205-285°C

Physica Scripta T

Volumn T126, Issue , 2006, Pages 81-84

  Mikelsen, M ^a   Monakhov, E V ^a   Avset, B S ^b,c   Svensson, B G ^a  

^a UNIVERSITY OF OSLO   (Norway)

^b SINTEF ICT   (Norway)

^c NONE   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ARRHENIUS PLOTS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; OXYGENATION;

ANNEALING KINETICS; DIVACANCY; L-CENTRE;

SEMICONDUCTING SILICON;

EID: 34147140312     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/2006/T126/019     Document Type: Conference Paper

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