On the identity of a crucial defect contributing to leakage current in silicon particle detectors

Applied Physics Letters

Volumn 92, Issue 13, 2008, Pages

  Bleka, J H ^a   Murin, L ^b   Monakhov, E V ^a   Avset, B S ^c   Svensson, B G ^a  

^a UNIVERSITY OF OSLO   (Norway)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^c SINTEF ICT   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTRA; ANNEALING; CONDUCTION BANDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY BARRIERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; SILICON DETECTORS;

ANNEALING RATES; CRUCIAL DEFECTS; INFRARED ABSORPTION BANDS; SILICON PARTICLE DETECTORS;

PARTICLE DETECTORS;

EID: 41649100678     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2896313     Document Type: Article

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