The E3 defect in Mg xZn 1-xO

Journal of Electronic Materials

Volumn 39, Issue 5, 2010, Pages 584-588

  Von Wenckstern, H ^a   Brachwitz, K ^a   Schmidt, M ^a   Dietrich, C P ^a   Ellguth, M ^a   Stolzel M ^a   Lorenz, M ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Deep level transient spectroscopy; E3 defect; MgZnO; Photoluminescence; Pulsed laser deposition; Schottky barrier diode; Thermal admittance spectroscopy

Indexed keywords

E3 DEFECT; MOLE FRACTION; SCHOTTKY BARRIERS; THERMAL ACTIVATION ENERGIES; THERMAL ADMITTANCE SPECTROSCOPY;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DISTILLATION; ELECTRIC ADMITTANCE; ELECTRON TRANSITIONS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; PULSED LASERS; SCHOTTKY BARRIER DIODES; ZINC;

ACTIVATION ENERGY;

EID: 77954623687     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0967-0     Document Type: Conference Paper

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