Deep level transient spectroscopy and pseudopotential superlattice calculation for an InAs monolayer embedded in GaAs

Journal of Applied Physics

Volumn 88, Issue 2, 2000, Pages 948-959

  Pickenhain, Rainer ^a   Schmidt, Heidemarie ^a   Gottschalch, Volker ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000326978     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373761     Document Type: Article

References (34)

1. K. Taira, H. Hase, I. Hase, K. Kanenko, and N. Watanabe, Appl. Phys. Lett. 53, 495 (1988).
2. J. H. Lee, K. Y. Hsieh, and R. M. Kolbas, Phys. Rev. B 41, 7678 (1990).
3. R. Cingolani, O. Brandt, L. Tapfer, G. Scamarcio, G. V. La Rocca, and K. Ploog, Phys. Rev. B 42, 3209 (1990).
4. O. Brandt, H. Lage, and K. Ploog, Phys. Rev. B 45, 4217 (1992).
5. P. D. Wang, N. N. Ledentsov, C. M. Sotomayor Torres, I. N. Yassievich, A. Pakhomov, A. Yu. Egovov, P. S. Kop'ev, and V. M. Ustinov, Phys. Rev. B 50, 1604 (1994).
6. M. V. Belousov et al., Phys. Rev. B 51, 14346 (1995).
7. R. Schwabe, F. Pietag, M. Faulkner, S. Lassen, V. Gottschalch, and R. Franzheld, J. Appl. Phys. 77, 6295 (1995).
8. J. Brübach, A. Yu. Silov, J. E. M. Haverkort, W. v. d. Vleuten, and J. H. Wolter, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 1963.
9. B. Rheinländer, H. Schmidt, and V. Gottschalch, Appl. Phys. Lett. 70, 1736 (1997).
10. R. Pickenhain and V. Gottschalch, Phys. Status Solidi A 164, R3 (1997).
11. V. Gottschalch, R. Schwabe, F. Pietag, G. Wagner, R. Franzheld, I. Pietzonka, S. Kriegel, and D. Hirsch, Proceedings of the Sixth European Workshop on Metal-Organic Vapour Phase Epitaxy And Related Growth Techniques, Gent, Belgium, June 25-28, 1995, C8.
12. M. Grundmann, O. Stier, and D. Bimberg, Phys. Rev. B 52, 11969 (1995).
13. S. Brehme and R. Pickenhain, Phys. Status Solidi A 88, K63 (1985).
14. H. Goto, Y. Adachi, and T. Ikoma, Jpn. J. Appl. Phys., Part 1 18, 1979 (1979).
15. R. C. Iotti, M. Di Ventra, and L. C. Andreani, Phys. Status Solidi A 164, 129 (1997).
16. C. M. A. Kapteyn, F. Heinrichsdorff, O. Stier, M. Grundmann, and D. Bimberg, in Proceedings of the 24th International Conference on the Physics of Semiconductors (World Scientific, Jerusalem, 1998).
17. P. Krispin, J.-L. Lazzari, and H. Kostial, J. Appl. Phys. 84, 6135 (1998).
18. M. Sato and Y. Horikoshi, J. Appl. Phys. 66, 851 (1989).
19. R. Colombelli, J.-M. Jancu, F. Beltram, L. Sorba, D. Bertho, and C. Jouanin, Appl. Phys. Lett. 68, 1534 (1996).
20. M. Di Ventra and K. A. Mäder, Phys. Rev. B 55, 13148 (1997).
21. N. Tit, J. Vac. Sci. Technol. A 16, 805 (1998).
22. K. Shiraishi and E. Yamaguchi, Phys. Rev. B 42, 3064 (1990).
23. N. Tit and M. Peressi, Phys. Rev. B 52, 10776 (1995).
24. R. Schwabe (private communication).
25. The development of this scanning DLTS device has been performed in connection with Raith GmbH Dortmund, Germany.
26. K. Kreher, Phys. Status Solidi A 135, 597 (1993).
27. B. M. Tschirner, F. Morier-Genoud, D. Martin, and F. K. Reinhardt, J. Appl. Phys. 79, 7005 (1996).
28. G. Böhm, S. Gürtler, R. Schwabe, and K. Unger, Semicond. Sci. Technol. 10, 214 (1995).
29. Z. H. Levine and S. G. Louie, Phys. Rev. B 25, 6310 (1982).
30. S.-H. Wei and A. Zunger, Phys. Rev. B 49, 14337 (1994); 25, 6310 (1982).
31. S.-H. Wei and A. Zunger, Phys. Rev. B 49, 14337 (1994); 25, 6310 (1982).
32. J. Hornstra and W. J. Bartels, J. Cryst. Growth 44, 513 (1978).
33. Numerical Data and Functional Relationships in Science and Technology, edited by O. Madelung, M. Schulz, and H. Weiss, Landoldt-Börnstein, New Series, Group III, Vol. 17, Pt. a (Springer, New York, 1982).
34. L.-W. Wang and A. Zunger, J. Chem. Phys. 100, 2394 (1994).