Properties of in-doped ZnO films grown by metalorganic chemical vapor deposition on GaN(0001) templates

Journal of Electronic Materials

Volumn 39, Issue 5, 2010, Pages 608-611

  Ben Yaacov, Tammy ^a   Ive, Tommy ^a   Van De Walle, Chris G ^a   Mishra, Umesh K ^a   Speck, James S ^a   Denbaars, Steven P ^a  

^a University of California   (United States)

Author keywords

Crystal growth; Doping; Electrical characterization; Growth; Indium doping; Metalorganic chemical vapor deposition; MOCVD; N type; Thin films; Zinc oxide; ZnO; ZnO:In

Indexed keywords

ELECTRICAL CHARACTERIZATION; INDIUM DOPING; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; ZNO;

BIOACTIVITY; CONCENTRATION (PROCESS); CRYSTAL GROWTH; CRYSTALLIZATION; DEPOSITION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; GALLIUM ALLOYS; GALLIUM NITRIDE; GRAIN BOUNDARIES; INDIUM; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDE FILMS; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

CARRIER CONCENTRATION;

EID: 77954622770     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-1022-x     Document Type: Conference Paper

References (19)

1. W.H. Hirschwald, Acc. Chem. Res. 18, 228 (1985).
2. U. Özgür, Y.I. Alivov, and C. Liu, J. Appl. Phys. 98, 4130 (2005).
3. S.J. Pearton, C.R. Abernathy, and M.E. Överberg, J. Appl. Phys. 93, 1 (2003).
4. D.G. Thomas, J. Phys. Chem. Solids 15, 86 (1960).
5. A. Janotti and C.G. Van de Walle, Appl. Phys. Lett. 87, 122102 (2005).
6. D.C. Look, J.W. Hemsky, and F.R. Sizelove, Phys. Rev. Lett. 82, 2552 (1999).
7. C.G. Van de Walle, Phys. Rev. Lett. 85, 1013 (2000).
8. V. Bhosle, A. Tiwari, and J. Narayan, Appl. Phys. Lett. 88, 032106 (2006).
9. W. Sato, Y. Itsüki, and S. Morimoto, Phys. Rev. B 78, 045219 (2008).
10. K. Tamura, K. Nakahara, and M. Sakai, Phys. Status Solidi 201, 2704 (2004).
11. T. Ive, T. Ben-Yaacov, A. Murai, H. Asamizu, and J.S. Speck, Phys. Status Solidi 5, 3091 (2008).
12. K. Nakahara, Jpn. J. Appl. Phys. 43, L180 (2004).
13. T. Margalith, O. Buchinsky, and L.A. Coldren, Appl. Phys. Lett. 74, 3930 (1999).
14. C. Guillen and J. Herrero, J. Appl. Phys. 101, 073514 (2007).
15. L. Kerkache, A. Layadi, E. Dogheche, and D. Remiens, Eur. Phys. J. Appl. Phys. 39, 1 (2007).
16. UCSB unpublished results.
17. M.A.L. Johnson, S. Fujita, and W.H. Rowland, J. Electron. Mater. 25, 855 (1996).
18. H.J. Ko, Y.F. Chen, S.K. Hong, H. Wenisch, T. Yao, and D.C. Look, Appl. Phys. Lett. 77, 3761 (2000).
19. T. Ive, T. Ben-Yaacov, and J. Speck, J. Cryst. Growth 310, 3407 (2008).