Detection of interface states correlated with SiO2/Si(111) interface structures

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 460-464

  Watanabe, N ^a   Teramoto, Y ^a   Omura, A ^a   Nohira, H ^a   Hattori, T ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRONIC DENSITY OF STATES; ENERGY GAP; INTERFACES (MATERIALS); OXIDATION; SEMICONDUCTING SILICON; SILICA;

INTERFACE STATE DENSITIES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0034299312     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00472-4     Document Type: Article

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