Towards perfect Ge δ layers on Si(001)

Applied Physics Letters

Volumn 68, Issue 10, 1996, Pages 1394-1396

  Falta, J ^a   Bahr, D ^a   Materlik, G ^a   Muller B H ^b   Horn Von Hoegen, M ^b  

^a DESY   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000554101     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116091     Document Type: Article

References (16)

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16. Best fits were obtained for a δ layer thickness of 1 ML. Only for the MBE sample we find fits of equal quality for a larger thickness up to 4 ML and an accordingly lower Ge concentration of x=0.06.