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Volumn 80, Issue 24, 2009, Pages

Fabrication of ZnO thin film transistors by atomic force microscopy nanolithogrophy through zinc thin films

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Indexed keywords


EID: 77954318338     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.245215     Document Type: Article
Times cited : (7)

References (26)
  • 13
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    • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    • DOI 10.1038/nature03090
    • K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
    • (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
    • Nomura, K.1    Ohta, H.2    Takagi, A.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 20
    • 33846160143 scopus 로고    scopus 로고
    • 4 nanochannels fabricated by AFM local-oxidation nanolithography using Mo/poly(methyl methacrylate) nanomasks
    • DOI 10.1002/adma.200600997
    • L. Pellegrino, Y. Yanagisawa, M. Ishikawa, T. Matsumoto, H. Tanaka, and T. Kawai, Adv. Mater. (Weinheim, Ger.) 18, 3099 (2006). 10.1002/adma.200600997 (Pubitemid 46080200)
    • (2006) Advanced Materials , vol.18 , Issue.23 , pp. 3099-3104
    • Pellegrino, L.1    Yanagisawa, Y.2    Ishikawa, M.3    Matsumoto, T.4    Tanaka, H.5    Kawai, T.6
  • 25
    • 33748877561 scopus 로고    scopus 로고
    • Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magnetron sputtering
    • DOI 10.1063/1.2337766
    • M.-L. Tu, Y.-K. Su, and C.-Y. Ma, J. Appl. Phys. 100, 053705 (2006). 10.1063/1.2337766 (Pubitemid 44422054)
    • (2006) Journal of Applied Physics , vol.100 , Issue.5 , pp. 053705
    • Tu, M.-L.1    Su, Y.-K.2    Chun-Yang, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.