Germanium enhanced large-grain growth by pulse mode rapid thermal crystallization process

Journal of Materials Science: Materials in Electronics

Volumn 18, Issue 5, 2007, Pages 475-480

  Lin, Chiung Wei ^a   Chang, Pao An ^a   Lee, Yeong Shyang ^b  

^a TATUNG UNIVERSITY   (Taiwan)

^b AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM-DOPED FILM; INFRARED PHOTONIC ENERGY; PULSE MODE RAPID THERMAL CRYSTALLIZATION;

AMORPHOUS SILICON; CRYSTALLIZATION; GERMANIUM; GRAIN GROWTH; NEAR INFRARED SPECTROSCOPY; THERMAL CONDUCTIVITY; THERMAL ENERGY;

SEMICONDUCTING FILMS;

EID: 33847396256     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-006-9066-7     Document Type: Article

References (19)

1. M. Rodder, D.A. Antoniadis, F. Scholz, A. Kalnitsky, IEEE Electr. Device L. EDL-8, 27 (1987)
2. I.W. Wu, A. Chiang, M. Fuse, L. Ömveçoglu, T.Y. Huang, J. Appl. Phys. 62, 1675 (1989)
3. R. Reif, J.E. Knott, Electron Lett. 17, 586 (1981)
4. Y. Komem, I.W. Hall, J. Appl. Phys. 52, 6655 (1981)
5. R.B. Inverson, R. Reif, Mater. Res. Symp. Proc. 27, 543 (1984)
6. R.B. Inverson, R. Reif, J. Appl.Phys. 57, 5169 (1985)
7. A. Kohno, T. Sameshima, N. Sano, M. Sekia, M. Hara, IEEE Trans. Electr. Device EDL-42, 251 (1995)
8. S. Yamaguchi, S.K. Park, N. Sugii, K. Nakagawa, M. Miyao, Thin Solid Films 369, 195 (2000)
9. M. Miyasaka, T. Shimoda, K. Makihira, T. Asano, B. Pecz, J. Stoemenos, Jpn. J. Appl. Phys. 42, 2592 (2003)
10. A.T. Voutsas, Appl. Surf. Sci. 208-209, 250 (2003)
11. S.W. Lee, T.H. Ihn, S.K. Joo, IEEE Electr. Device L. EDL-7, 407 (1996)
12. Y. Kawazu, H. Kudo, S. Onari, T. Arai, Jpn. J. Appl. Phys. 29, 2698 (1990)
13. Y.N. Erokhin, F. Hong, S. Pramanick, G.A. Rozgonvi, B.K. Pantnaik, C.N. White, Appl. Phys. Lett. 63, 3173 (1993)
14. R. Kakkad, J. Smith, W.S. Lau, S.J. Fonash, R. Kerns, J. App1. Phys. 65, 2069 (1989)
15. S.W. Lee, S.K. Joo, IEEE Electr. Device L. ED-17, 160 (1996)
16. S. Yamaguchi, S.K. Park, N. Sugii, Mat. Res. Soc. Symp. Proc. 638, 12 (2001)
17. C.J. Glassbrenner, Glen A. Slack, Phys. Rev. 134, 1058 (1964)
18. V. Subramanian, P. Dankoski, L. Degertekin, B.T. Khuri-Yakub, K.C. Saraswat, IEEE. Electr. Device L. EDL-8, 378 (1997)
19. S.M. Sze, in "Physics of Semiconductor Devices" (John Wiley & Sons, U.S.A., 1981) p. 850