Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1464-1467

  Tekmen, Süleyman ^a   Gür, Emre ^a   Asil, Hatice ^a   Çinar, Kübra ^a   Coşkun, Cevdet ^a   Tüzemen, Sebahattin ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Current voltage characteristics; Electronic transport; Heterojunction; II VI semiconductor tosemiconductor contact; Photoluminescence

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL PROPERTY; ELECTRONIC TRANSPORT; GAAS; GAAS SUBSTRATES; HIGH QUALITY; II-VI SEMICONDUCTOR; II-VI SEMICONDUCTOR-TOSEMICONDUCTOR CONTACT; PREFERENTIAL ORIENTATION; RECTIFICATION FACTORS; RECTIFYING CHARACTERISTICS; TURN ON VOLTAGE; ULTRA-VIOLET; ZNO FILMS; ZNO THIN FILM;

DISTILLATION; ELECTRIC PROPERTIES; ELECTRIC RECTIFIERS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GROUND STATE; HETEROJUNCTIONS; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77954297742     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925488     Document Type: Article

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