The structure and optical characters of the ZnO film grown on GaAs/Al 2 O 3 substrate

Applied Surface Science

Volumn 255, Issue 12, 2009, Pages 6313-6317

  Xia, Xiaochuan ^a   Zhao, Wang ^a   Jian, Yuantao ^a   Li, Xiangping ^a   Dong, Xin ^a   Cui, Yongguo ^b   Zhang, Yuantao ^a   Fang, Xiujun ^a   Li, Guoxing ^a   Zhu, Huichao ^a   Ma, Yan ^a   Zhang, Baolin ^a   Du, Guotong ^a,b  

^a JILIN UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Metal organic chemical vapor deposition; Oxides; Semiconducting II VI materials

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC FORCE MICROSCOPY; GALLIUM ARSENIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; INDUSTRIAL CHEMICALS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; OXIDES; SEMICONDUCTING GALLIUM; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); AFM IMAGE; GRAIN SIZE; INTRINSIC DEFECTS; METAL ORGANIC; OPTICAL QUALITIES; RAMAN ANALYSIS; SEMICONDUCTING II-VI MATERIALS;

SUBSTRATES;

EID: 62349090796     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.02.008     Document Type: Article

References (25)

1. Yuan H., and Zhang Y. J. Cryst. Growth 263 (2004) 119-124
2. Kwon B.J., Kwack H.S., Lee S.K., Cho Y.H., Hwang D.K., and Park S.J. Appl. Phys. Lett. 91 (2007) 061903
3. Kim H., Cepler A., Osofsky M.S., Auyeung R.C.Y., and Piqué A. Appl. Phys. Lett. 90 (2007) 203508
4. Jung Y.S., Choi W.K., Kononenko O.V., and Panin G.N. J. Appl. Phys. 99 (2006) 013502
5. Zhang G., Nakamura A., Aoki T., Temmyo J., and Matsui Y. Appl. Phys. Lett. 89 (2006) 113112
6. Zhang S.B., Wei S.-H., and Zunger A. J. Appl. Phys. 83 (1998) 3192
7. Ryu Y.R., Lubguban J.A., Lee T.S., White H.W., Jeong T.S., Youn C.J., and Kim B.J. Appl. Phys. Lett. 90 (2007) 131115
8. Sun J.C., Zhao J.Z., Liang H.W., Bian J.M., Hu L.Z., Zhang H.Q., Liang X.P., Liu W.F., and Du G.T. Appl. Phys. Lett. 90 (2007) 121128
9. Du G., Cui Y., Xiaochuan X., Li X., Zhu H., Zhang B., Zhang Y., and Ma Y. Appl. Phys. Lett. 90 (2007) 243504
10. Sun H.P., Pan X.Q., Du X.L., Mei Z.X., Zeng Z.Q., and Xue Q.K. Appl. Phys. Lett. 85 (2004) 4385
11. Kang H.S., Kim G.H., Kim D.L., Chang H.W., Ahn B.D., and Lee S.Y. Appl. Phys. Lett. 89 (2006) 181103
12. Limpijumnong S., Zhang S.B., Wei S.-H., and Park C.H. Phys. Rev. Lett. 92 (2004) 155504
13. Cho S., Ma J., Kim Y., Sun Y., Wong G.K.L., and Ketterson J.B. Appl. Phys. Lett. 75 (1999) 2761
14. Ong H.C., Zhu A.X.E., and Du G.T. Appl. Phys. Lett. 80 (2002) 941
15. Karzel H., et al. Phys. Rev. B 53 (1996) 11425
16. Ghosh R., Basak D., and Fujihara S. J. Appl. Phys. 96 (2004) 2689
17. Park W.I., Kim D.H., Jung S.-W., and Yi G.-C. Appl. Phys. Lett. 80 (2002) 4232
18. Kohan A.F., Ceder G., Morgan D., and Van De Walle C.G. Phys. Rev. B 61 (2000) 15019
19. Park J.-H., Jang S.-J., Kim S.-S., and Lee B.-T. Appl. Phys. Lett. 89 (2006) 121108
20. Park D.J., Lee J.Y., Kim D.C., Mohanta S.K., and Cho H.K. Appl. Phys. Lett. 91 (2007) 143115
21. Zhou X., Gu S., Qin F., Zhu S., Ye J., Liu S., Liu W., Zhang R., Shi Y., and Zheng Y. J. Cryst. Growth 269 (2004) 362-366
22. Bundesmann C., Ashkenov N., Schubert M., Spemann D., Butz T., Kaidashev E.M., Lorenz M., and Grundmann M. Appl. Phys. Lett. 83 (2003) 1974
23. Cuscó R., Alarcón-Lladó E., Ibáñez J., Artús L., Jiménez J., Wang B., and Callahan M.J. Phys. Rev. B 75 (2007) 165202
24. Jeong T.S., Han M.S., Youn C.J., and Park Y.S. J. Appl. Phys. 96 (2004) 175
25. Cong G.W., Wei H.Y., Zhang P.F., Peng W.Q., Wu J.J., Liu X.L., Jiao C.M., Hu W.G., Zhu Q.S., and Wang Z.G. Appl. Phys. Lett. 87 (2005) 231903