Optically pumped lasing at 300.4nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al 2O 3

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1313-1317

  Jmerik, V N ^a   Mizerov, A M ^a   Shubina, T V ^a   Toropov, A A ^a   Belyaev, K G ^a   Sitnikova, A A ^a   Yagovkina, M A ^a   Kop'ev, P S ^a   Lutsenko, E V ^b   Danilchyk, A V ^b   Rzheutskii, N V ^b   Yablonskii, G P ^b   Monemar, B ^c   Ivanov, S V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

AlGaN; Dislocations; Laser; MBE; Photoluminescence; Quantum wells

Indexed keywords

ALGAN; C-SAPPHIRE; DISLOCATIONS; LASER MBE; LASER STRUCTURES; NUMERICAL CALCULATION; OPTICALLY PUMPED; OPTIMUM DESIGNS; PEAK POWER; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; QUANTUM WELL; ROOM TEMPERATURE; SHORT-PERIOD SUPERLATTICES; TEMPERATURE DEPENDENCE; THREADING DISLOCATION DENSITIES; TIME-RESOLVED PHOTOLUMINESCENCE; UV LASING;

CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE; QUANTUM WELL LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77954289357     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983612     Document Type: Article

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