Global analysis of GaN growth using a solution technique

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1790-1793

  Kashiwagi, D ^a   Gejo, R ^b   Kangawa, Y ^a   Liu, L ^a   Kawamura, F ^b   Mori, Y ^b   Sasaki, T ^b   Kakimoto, K ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

A2. Growth from solution; B2. Semiconductor gallium compounds

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; GROWTH RATE; MASS TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTOR GROWTH;

CONDUCTIVE HEAT; GALLIUM NITRIDE (GAN) WAFERS; GROWTH FROM SOLUTION; TEMPERATURE DIFFERENCE;

CRYSTAL GROWTH;

EID: 41449104961     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.10.061     Document Type: Article

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