High pressure-high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport

Journal of Crystal Growth

Volumn 307, Issue 2, 2007, Pages 259-267

  Bockowski, M ^a   Strak, P ^b   Kempisty, P ^b   Grzegory, I ^a   Krukowski, S ^a   Lucznik, B ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

A2. High pressure growth from solution; A2. Seeded growth; B1. Gallium nitride

Indexed keywords

CRYSTALLIZATION; ELECTRON TRANSPORT PROPERTIES; FINITE ELEMENT METHOD; FLOW VELOCITY; GALLIUM NITRIDE; TEMPERATURE MEASUREMENT;

HIGH-PRESSURE GROWTH FROM SOLUTION; HIGH-PRESSURE SOLUTIONS; SEEDED GROWTH;

CRYSTAL GROWTH;

EID: 34548508210     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.07.004     Document Type: Article

References (7)

1. Grzegory I., Boćkowski M., and Porowski S. In: Capper P. (Ed). Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials (2005), Wiley, New York 173
2. Boćkowski M., Grzegory I., Krukowski S., Łucznik B., Wróblewski M., Kamler G., Borysiuk J., Kwiatkowski P., Jasik K., and Porowski S. J. Crystal Growth 270 (2004) 409
3. Boćkowski M., Grzegory I., Krukowski S., Lucznik B., Wróblewski M., Kamler G., Borysiuk J., Kwiatkowski P., Jasik K., and Porowski S. J. Crystal Growth 274 (2005) 55
4. Boćkowski M. Cryst. Res. Technol. 36 8-10 (2001) 771
5. Fidap User Manual, Fluent Inc.
6. Krukowski S., Grzegory I., Bockowski M., Lucznik B., Suski T., Nowak G., Borysiuk J., Wróblewski M., Leszczynski M., Perlin P., Porowski S., and Weyher J.L. Int. J. Mater. Prod. Technol. 22 (2005) 226
7. Material Property Data 〈http://www.matweb.com〉.