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Volumn 207, Issue 6, 2010, Pages 1365-1368
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MBE growth of cubic AlN on 3C-SiC substrate
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Author keywords
AlN; Growth; MBE; Morphology; Optical properties; Structure
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Indexed keywords
ALN;
ALN LAYERS;
ATOMICALLY SMOOTH SURFACE;
CRITICAL POINTS;
CUBIC ALN;
CUBIC LATTICE;
CUBIC STRUCTURE;
DIELECTRIC FUNCTIONS;
ELECTRON ENERGIES;
GROWTH;
HIGH ENERGY;
HIGH QUALITY;
HIGH-RESOLUTION X-RAY DIFFRACTION;
LATTICE PARAMETERS;
MBE GROWTH;
PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;
ROOM TEMPERATURE;
SIC SUBSTRATES;
ADSORPTION;
ATOMIC FORCE MICROSCOPY;
CRYSTAL GROWTH;
EQUATIONS OF STATE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MORPHOLOGY;
SILICON CARBIDE;
SUBSTRATES;
X RAY DIFFRACTION;
OPTICAL PROPERTIES;
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EID: 77954258408
PISSN: 18626300
EISSN: 18626319
Source Type: Journal
DOI: 10.1002/pssa.200983437 Document Type: Article |
Times cited : (10)
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References (15)
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