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Volumn 254, Issue 15, 2008, Pages 4757-4761

Application of spectroscopic photoemission and low energy electron microscope to high-k gate dielectrics: Relationship between surface morphology and electronic states during Hf-silicide formation

(11) Yasuhara, R a Taniuchi, T a Kumigashira, H a,b Oshima, M a,b Guo, F b,c Kinoshita, T b,c Ono, K b,d Ikeda, K e Liu, G L e Liu, Z e Usuda, K e

a UNIVERSITY OF TOKYO (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

d INSTITUTE OF MATERIALS STRUCTURE SCIENCE (Japan)

e SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER (Japan)

Author keywords

Electronic states; High k gate dielectrics; Microregion photoelectron spectroscopy; PEEM; Vacuum annealing

Indexed keywords

ELECTRONIC STATES; HAFNIUM COMPOUNDS; PERMITTIVITY; PHOTOELECTRON SPECTROSCOPY; SURFACE MORPHOLOGY; ULTRAHIGH VACUUM;

MICROREGION PHOTOELECTRON SPECTROSCOPY; ULTRAHIGH VACUUM ANNEALING; VACUUM ANNEALING;

GATE DIELECTRICS;

EID: 42749090981 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2008.01.084 Document Type: Article

Times cited : (3)

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