Infrared signatures of high carrier densities induced in semiconducting poly(3-hexylthiophene) by fluorinated organosilane molecules

Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

  Khatib, O ^a   Lee, B ^b   Yuen, J ^c   Li, Z Q ^d   Di Ventra, M ^d   Heeger, A J ^d   Podzorov, V ^d   Basov, D N ^d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITOR MODELS; CARRIER DENSITY; DC ELECTRICAL; DELOCALIZED STATE; DOPED FILMS; HOLE-DOPING; INFRARED SIGNATURE; MID-IR ABSORPTION; ORGANOSILANE MOLECULES; POLY (3-HEXYLTHIOPHENE); POLYTHIOPHENES; SPECTROSCOPIC DATA; TRICHLOROSILANES;

ABSORPTION; CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; METAL INSULATOR BOUNDARIES; ORGANIC FIELD EFFECT TRANSISTORS; POLARONS; SEMICONDUCTOR INSULATOR BOUNDARIES; SMELTING; THIOPHENE;

METAL INSULATOR TRANSITION;

EID: 77954200957     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3436567     Document Type: Article

References (46)

1. A. J. Heeger, Rev. Mod. Phys. RMPHAT 0034-6861 73, 681 (2001). 10.1103/RevModPhys.73.681
2. R. D. McCullough, Adv. Mater. ADVMEW 0935-9648 10, 93 (1998). 10.1002/(SICI)1521-4095(199801)10:2<93::AID-ADMA93>3.0.CO;2-F
3. M. J. Panzer and C. D. Frisbie, Adv. Funct. Mater. AFMDC6 1616-301X 16, 1051 (2006). 10.1002/adfm.200600111 (Pubitemid 43798476)
4. H. Yang, S. W. LeFevre, C. Y. Ryu, and Z. Bao, Appl. Phys. Lett. APPLAB 0003-6951 90, 172116 (2007). 10.1063/1.2734387 (Pubitemid 46748362)
5. C. H. Ahn, J. -M. Triscone, and J. Mannhart, Nature (London) NATUAS 0028-0836 424, 1015 (2003). 10.1038/nature01878 (Pubitemid 37069244)
6. C. H. Ahn, A. Bhattacharya, M. Di Ventra, J. N. Eckstein, C. D. Frisbie, M. E. Gershenson, A. M. Goldman, I. H. Inoue, J. Mannhart, A. J. Millis, A. F. Morpurgo, D. Natelson, and J. -M. Triscone, Rev. Mod. Phys. RMPHAT 0034-6861 78, 1185 (2006). 10.1103/RevModPhys.78.1185 (Pubitemid 44733939)
7. G. Brocks, J. van den Brink, and A. F. Morpurgo, Phys. Rev. Lett. PRLTAO 0031-9007 93, 146405 (2004). 10.1103/PhysRevLett.93.146405
8. A. S. Dhoot, J. D. Yuen, M. Heeney, I. McCulloch, D. Moses, and A. J. Heeger, Proc. Natl. Acad. Sci. U.S.A. PNASA6 0027-8424 16, 1051 (2006).
9. J. D. Yuen, A. S. Dhoot, E. B. Namdas, N. E. Coates, M. Heeney, I. McCulloch, D. Moses, and A. J. Heeger, J. Am. Chem. Soc. JACSAT 0002-7863 129, 14367 (2007). 10.1021/ja0749845 (Pubitemid 350171461)
10. M. J. Panzer and C. D. Frisbie, J. Am. Chem. Soc. JACSAT 0002-7863 129, 6599 (2007). 10.1021/ja0708767 (Pubitemid 46799358)
11. L. Herlogsson, Y. -Y. Noh, N. Zhao, X. Crispin, H. Sirringhaus, and M. Berggren, Adv. Mater. ADVMEW 0935-9648 20, 4708 (2008). 10.1002/adma.200801756
12. T. Mills, L. G. Kaake, and X. -Y. Zhu, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 95, 291 (2009). 10.1007/s00339-008-5026-9
13. M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson, and V. Podzorov, Nature Mater. NMAACR 1476-1122 7, 84 (2008). 10.1038/nmat2059
14. C. Y. Kao, B. Lee, L. S. Wielunski, M. Heeney, I. McCulloch, E. Garfunkel, L. C. Feldman, and V. Podzorov, Adv. Funct. Mater. AFMDC6 1616-301X 19, 1906 (2009). 10.1002/adfm.200900120
15. M. Pope and C. E. Swenberg, Electronic Processes in Organic Crystals and Polymers (Oxford University Press, New York, 1999).
16. Z. Q. Li, G. M. Wang, N. Sai, D. Moses, N. C. Martin, M. Di Ventra, A. J. Heeger, and D. N. Basov, Nano Lett. NALEFD 1530-6984 6, 224 (2006). 10.1021/nl052166+ (Pubitemid 43382956)
17. Z. Bao, A. Dodabalapur, and A. J. Lovinger, Appl. Phys. Lett. APPLAB 0003-6951 69, 4108 (1996). 10.1063/1.117834
18. N. Sai, Z. Q. Li, M. C. Martin, D. N. Basov, and M. Di Ventra, Phys. Rev. B PRBMDO 0163-1829 75, 045307 (2007). 10.1103/PhysRevB.75.045307
19. Z. Bao and J. Locklin, Organic Field-Effect Transistors (Taylor & Francis, Boca Raton, 2007).
20. A. Assadi, G. Gustaffson, M. Willander, C. Svensson, and O. Ingans, Synth. Met. SYMEDZ 0379-6779 37, 123 (1990). 10.1016/0379-6779(90)90135-8
21. P. J. Brown, H. Sirringhaus, M. Harrison, M. Shkunov, and R. H. Friend, Phys. Rev. B PRBMDO 0163-1829 63, 125204 (2001). 10.1103/PhysRevB.63.125204
22. L. Bürgi, R. H. Friend, and H. Sirringhaus, Appl. Phys. Lett. APPLAB 0003-6951 82, 1482 (2003). 10.1063/1.1556564
23. A. S. Dhoot, G. M. Wang, D. Moses, and A. J. Heeger, Phys. Rev. Lett. PRLTAO 0031-9007 96, 246403 (2006). 10.1103/PhysRevLett.96.246403 (Pubitemid 43927091)
24. D. Braga and G. Horowitz, Adv. Mater. ADVMEW 0935-9648 21, 1473 (2009). 10.1002/adma.200802733
25. Th. B. Singh and N. S. Sariciftci, Annu. Rev. Mater. Res. ARMRCU 1531-7331 36, 199 (2006). 10.1146/annurev.matsci.36.022805.094757 (Pubitemid 44476830)
26. Z. Q. Li, V. Podzorov, N. Sai, M. C. Martin, M. E. Gershenson, M. Di Ventra, and D. N. Basov, Phys. Rev. Lett. PRLTAO 0031-9007 99, 016403 (2007). 10.1103/PhysRevLett.99.016403 (Pubitemid 47150496)
27. M. Fischer, M. Dressel, B. Gompf, A. K. Tripathi, and J. Pflaum, Appl. Phys. Lett. APPLAB 0003-6951 89, 182103 (2006). 10.1063/1.2370743 (Pubitemid 44705693)
28. T. J. Lenk, V. M. Hallmark, C. L. Hoffmann, J. F. Rabolt, D. G. Castner, C. Erdelen, and H. Ringsdorf, Langmuir LANGD5 0743-7463 10, 4610 (1994). 10.1021/la00024a037
29. M. -W. Tsao, C. L. Hoffmann, J. F. Rabolt, H. E. Johnson, D. G. Castner, C. Erdelen, and H. Ringsdorf, Langmuir LANGD5 0743-7463 13, 4317 (1997). 10.1021/la970293i
30. F. Sinapi, T. Issakova, J. Delhalle, and Z. Mekhalif, Thin Solid Films THSFAP 0040-6090 515, 6833 (2007). 10.1016/j.tsf.2007.01.049 (Pubitemid 46670159)
31. X. M. Jiang, R. Österbacka, O. Korovyanko, C. P. An, B. Horovitz, R. A. J. Janssen, and Z. V. Vardeny, Adv. Funct. Mater. AFMDC6 1616-301X 12, 587 (2002). 10.1002/1616-3028(20020916)12:9<587::AID-ADFM587>3.0.CO;2-T
32. R. Österbacka, X. M. Jiang, C. P. An, B. Horovitz, and Z. V. Vardeny, Phys. Rev. Lett. PRLTAO 0031-9007 88, 226401 (2002). 10.1103/PhysRevLett.88.226401
33. A. J. Heeger, S. Kivelson, J. R. Schrieffer, and W. -P. Su, Rev. Mod. Phys. RMPHAT 0034-6861 60, 781 (1988). 10.1103/RevModPhys.60.781
34. Y. H. Kim and A. J. Heeger, Phys. Rev. B PRBMDO 0163-1829 40, 8393 (1989). 10.1103/PhysRevB.40.8393
35. B. Horovitz, Solid State Commun. SSCOA4 0038-1098 41, 729 (1982). 10.1016/0038-1098(82)91126-7 (Pubitemid 12515526)
36. B. Horovitz, R. Österbacka, and Z. V. Vardeny, Synth. Met. SYMEDZ 0379-6779 141, 179 (2004). 10.1016/j.synthmet.2003.09.019
37. R. Österbacka, C. P. An, X. M. Jiang, and Z. V. Vardeny, Science SCIEAS 0036-8075 287, 839 (2000). 10.1126/science.287.5454.839 (Pubitemid 30084323)
38. Y. H. Kim, D. Spiegel, S. Hotta, and A. J. Heeger, Phys. Rev. B PRBMDO 0163-1829 38, 5490 (1988). 10.1103/PhysRevB.38.5490
39. M. Dressel and G. Grüner, Electrodynamics of Solids (Cambridge University Press, Cambridge, 2002).
40. M. M. Qazilbash, M. Brehm, G. O. Andreev, A. Frenzel, P. -C. Ho, B. -G. Chae, B. -J. Kim, S. J. Yun, H. -T. Kim, A. V. Balatsky, O. G. Shpyrko, M. B. Maple, F. Keilmann, and D. N. Basov, Phys. Rev. B PRBMDO 0163-1829 79, 075107 (2009). 10.1103/PhysRevB.79.075107
41. S. A. Brazovskii and N. N. Kirova, JETP Lett. JTPLA2 0021-3640 33, 4 (1981).
42. H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielson, K. Bechgaard, B. M. W. Langeveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E. W. Meijer, P. Herwig, and D. M. de Leeuw, Nature (London) NATUAS 0028-0836 401, 685 (1999). 10.1038/44359 (Pubitemid 29485210)
43. M. Wohlgenannt, X. M. Jiang, and Z. V. Vardeny, Phys. Rev. B PRBMDO 0163-1829 69, 241204 (R) (2004). 10.1103/PhysRevB.69.241204
44. V. Cataudella, G. De Filippis, and G. Iadonisi, Eur. Phys. J. B EPJBFY 1434-6028 12, 17 (1999). 10.1007/s100510050970
45. S. Ciuchi and S. Fratini, Phys. Rev. B PRBMDO 0163-1829 79, 035113 (2009). 10.1103/PhysRevB.79.035113
46. K. Lee, S. Cho, S. H. Park, A. J. Heeger, C. -W. Lee, and S. -H. Lee, Nature (London) NATUAS 0028-0836 441, 65 (2006). 10.1038/nature04705