Formation of the accumulation layer in polymer field-effect transistors

Applied Physics Letters

Volumn 82, Issue 9, 2003, Pages 1482-1484

  Burgi L ^a   Friend, R H ^a   Sirringhaus, H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE TRANSFER; ELECTRIC FIELDS; ELECTRIC POTENTIAL; POLYMERS; THIN FILMS;

POLYMER FIELD-EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0037416616     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1556564     Document Type: Article

References (11)

1. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
2. N. Tessler and Y. Roichman, Appl. Phys. Lett. 79, 2987 (2001).
3. L. Bürgi, H. Sirringhaus, and R. H. Friend, Appl. Phys. Lett. 80, 2913 ( 2002).
4. g only.
5. ch(t) for t> 10 τ (τ=decay time of this transient), and has subsequently been subtracted from the data.
6. C.-K. Kim and M. Lenzlinger, J. Appl. Phys. 42, 3586 (1971).
7. C.-K. Kim, in Charge-Coupled Devices and Systems, edited by M. J. Howes and D. V. Morgan (Wiley, Chichester, 1979), p. 1.
8. Y. Roichman and N. Tessler, Appl. Phys. Lett. 80, 1948 (2002).
9. f=0 and D = 0, and thus is unphysical.
10. The asymptotic behavior has been confirmed by solving Eq. (2) numerically using MATLAB.
11. H. Sirringhaus, N. Tessler, D. S. Thomas, P. J. Brown, and R. H. Friend, Adv. Solid State Phys. 39, 101 (1999).