Monolithic high-voltage GaN MOSFET/schottky pair with reverse blocking capability

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2007, Pages 265-268

  Huang, W ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING PROBABILITY; CHANNEL ESTIMATION; GALLIUM NITRIDE; MOSFET DEVICES; SCHOTTKY BARRIER DIODES;

BLOCKING CAPABILITY; BLOCKING VOLTAGES; DC CHARACTERISTICS; REVERSE BLOCKING;

TRANSISTORS;

EID: 39749127773     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294983     Document Type: Conference Paper

References (11)

1. T. P. Chow, "SiC and GaN power devices", in Pro. Mat. Res. Soc. Spring Meeting, vol. 622, pp. T1.1.1-T1.1.13, 2000.
2. N.-Q. Zhang, S. Keller, G. Parish, S. Heikman, S. P. Denbaars, and U.K. Mishra, "High breakdown GaN HEMT with overlapping gate structure", IEEE Electron Device Letters, vol. 21, pp. 421-423, 2000.
3. H. Xing, Y. Dora, A. Chini, S. Heikman, S. Keller, and U. K. Mishra, "High breakdown voltage AlGaN-GaN HEMT achieved by multiple field plates", IEEE Electron Device Letters, vol. 25, pp. 161-163, 2004.
4. N. Tipurneni, A. Koudymov, V. Adivarahan, J. Yang, G. Simm, and M. Asif. Khan, "The 1.6-kV AlGaN/GaN HFETs", IEEE Electron Device Letters, vol. 27, pp. 716-718, 2006.
5. Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, S. P. Denbaars, and U. K. Mishra, "High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates", IEEE Electron Device Letters, vol. 27, pp. 713-715, 2006.
6. K. Matocha, T.P. Chow, and R.J. Gutmann, "Positive Hatband voltage shift in MOS capacitors on n-type GaN", Proc. Int. Symp. Power. Semicond. Devices ICs, pp. 54-57, 2003.
7. K. Matocha, T.P. Chow, and R.J. Gutmann, "High-voltage accumulation-mode lateral RESURF GaN MOSFETs on SiC substrate ", IEEE Electron Device Letters, vol. 23, pp. 79-81, 2002.
8. K. Matocha, T. P. Chow, and R. J. Gutmann, "High-voltage normally off GaN MOSFETs on sapphire substrates", IEEE Trans. Electron Devices, vol. 52, pp. 6-10, Jan. 2005.
9. W. Huang, T. Khan, and T.P. Chow, "Comparison of MOS capacitors on N an P type GaN", J. Electronic Materials, vol. 35, pp. 726-732, 2006.
10. W. Huang, T. Khan, and T.P. Chow, "Asymmetric Interface Densities on n and p type GaN MOS capacitors", Proc. Int. Conf. Silicon Carbide and Related Materials, pp. 1525-1528, 2005.
11. W. Huang, T. Khan, and T. P. Chow, "Enhancement-mode n-channel GaN MOSFETs on p and n-GaN/sapphire substrates", IEEE Electron Device Letters, vol. 27, pp. 796-798, 2006.