Schottky drain AlGaN/GaN HEMTs for mm-wave applications

65th DRC Device Research Conference

Volumn , Issue , 2007, Pages 107-108

  Zhao, X ^a   Chung, J W ^a   Tang, H ^a   Palacios, T ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47249154917     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2007.4373672     Document Type: Conference Paper

References (3)

1. T. Palacios et al, IEEE Electron Device Letters, vol. 26, p. 781 (2005)
2. P.J. Tasker et al., IEEE Electron Device Letters, vol. 10, p. 291 (1989)
3. T. Palacios et al, Device Research Conference Digest, p. 99 (2006)