Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis

Journal of Electron Microscopy

Volumn 57, Issue 1, 2008, Pages 1-5

  Okuno, Hanako ^a   Takeguchi, Masaki ^a   Mitsuishi, Kazutaka ^a   Guo, Xing J ^a   Furuya, Kazuo ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Sample preparation; Scanning transmission electron microscopy; Z contrast imaging

Indexed keywords

ALUMINUM; GALLIUM;

ARTICLE; CHEMISTRY; LABORATORY DIAGNOSIS; METHODOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM; GALLIUM; MICROSCOPY, ELECTRON, TRANSMISSION; SPECIMEN HANDLING;

GALLIUM NITRIDE; III-V SEMICONDUCTORS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY;

AMORPHOUS LAYER; ATOMICALLY FLAT SURFACE; GAN BASED; POLISHING TECHNIQUES; SAMPLE PREPARATION; SAPPHIRE SUBSTRATES; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SURFACE DAMAGES; TEM SAMPLE PREPARATION; Z-CONTRAST IMAGING;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 38849184577     PISSN: 00220744     EISSN: 14779986     Source Type: Journal    
DOI: 10.1093/jmicro/dfm034     Document Type: Article

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