![]() |
Volumn 88, Issue 8, 2006, Pages
|
Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CARBON DOPING;
CARBON INCORPORATION;
CARBON-RELATED BAND;
SUBSTRATE TEMPERATURE;
CARBON;
DOPING (ADDITIVES);
MOLECULAR BEAM EPITAXY;
SILICON;
SUBSTRATES;
THERMAL EFFECTS;
|
EID: 33644512094
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2179375 Document Type: Article |
Times cited : (50)
|
References (8)
|