Impact of 〈 110 〉 uniaxial strain on n-channel In0.15 Ga0.85 As high electron mobility transistors

Applied Physics Letters

Volumn 95, Issue 24, 2009, Pages

  Xia, Ling ^a   Del Alamo, Jesús A ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; INTRINSIC TRANSCONDUCTANCE; N-CHANNEL; PIEZO-ELECTRIC EFFECTS; SCHOTTKY BARRIER HEIGHTS; STRAIN LEVELS; SUB-BANDS; SYSTEMATIC CHANGES; UNI-AXIAL STRAINS;

DISSOCIATION; ELECTRON MOBILITY; ELECTROSTATICS; GALLIUM; PIEZOELECTRICITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77956164550     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3273028     Document Type: Article

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