A model of preferential (100) crystal orientation of Si grains grown by aluminium-induced layer-exchange process

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7465-7468

  Sarikov, Andrey ^a   Schneider, Jens ^a   Muske, Martin ^a   Sieber, Ina ^a   Gall, Stefan ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

A1. Crystallographic orientation; A1. Nucleation; A3. Aluminium induced crystallisation; B2. Semiconducting silicon

Indexed keywords

FILM GROWTH; GIBBS FREE ENERGY; NUCLEATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

ALUMINIUM-INDUCED CRYSTALLIZATION; EPITAXIAL THICKENING; NUCLEATION BARRIERS;

CRYSTAL ORIENTATION;

EID: 34547582144     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.124     Document Type: Article

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