Direct extraction of mobility in pentacene OFETs using C-V and I-V measurements

IEEE Electron Device Letters

Volumn 26, Issue 10, 2005, Pages 716-718

  Ryu, K ^a   Kymissis, I ^a   Bulovic V ^a   Sodini, C G ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Capacitance; Capacitance voltage (C V); Characterization; Mobility; Organic field effect transistors (OFETs); Organic transistor; Pentacene

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE (C-V) CHARACTERISTICS; ORGANIC FIELD EFFECT TRANSISTORS (OFETS); ORGANIC TRANSISTOR; PENTACENE;

FIELD EFFECT TRANSISTORS;

EID: 27144557065     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.854394     Document Type: Article

References (8)

1. C. D. Sheraw, L. Zhou, J. R. Huang, D. J. Gundlach, and T. N. Jackson, "Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on polymeric substrates," Appl. Phys. Lett., vol. 80, pp. 1088-1089, 2002.
2. M. G. Kane, J. Campi, M. S. Hammond, F. P. Cuomo, B. Greening, C. D. Sheraw, J. A. Nichols, D. J. Gundlach, J. R. Huang, C. C. Kuo, L. Jia, H. Klauk, and T. N. Jackson, "Analog and digital circuits using organic thin-film transistors on polyester substrates," IEEE Electron Device Lett., vol. 21, no. 6, pp. 534-536, Jun. 2000.
3. D. Gamota, 1620 IEEE Standard Test Methods for the Characterization of Organic Transistors and Materials, 2004.
4. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, "Modeling of organic thin film transistors of different designs," J. Appl. Phys., vol. 88, pp. 6594-6597, 2000.
5. J. Koomen, "Investigation of the MOST channel conductance in weak inversion," Solid State Electron., vol. 16, pp. 801-810, 1973.
6. K. Terada and H. Muta, "A new method to determine effective MOSFET channel length," Jpn. J. Appl. Phys., vol. 18, pp. 953-959, 1979.
7. J. G. J. Chern, P. Chang, R. F. Motta, and N. Godinho, "A new method to determine MOSFET channel length," IEEE Electron Device Lett., vol. EDL-1, no. 2, pp. 170-173, Feb. 1980.
8. T. Tiedje and A. Rose, "A physical interpretation of dispersive transport in disordered semiconductors," Solid State Commun., vol. 37, pp. 49-52, 1980.