Electrochemical pinning of the fermi level: Mediation of photoluminescence from gallium nitride and zinc oxide

Journal of the American Chemical Society

Volumn 130, Issue 39, 2008, Pages 12944-12952

  Chakrapani, Vidhya ^a   Pendyala, Chandrashekhar ^c   Kash, Kathleen ^b   Anderson, Alfred B ^b   Sunkara, Mahendra K ^c   Angus, John C ^a  

^a Case Western Reserve University   (United States)

^b CASE WESTERN RESERVE UNIVERSITY   (United States)

^c University of Louisville   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED WATER; DEFECT FORMATION; ELECTROCHEMICAL REDOX; ELECTRON EXCHANGE; HUMID AIR; HYDROGEN-TERMINATED DIAMOND; LUMINESCENT INTENSITY; OPTICAL MEASUREMENT; ZNO;

CHARGE TRANSFER; CHEMISORPTION; DIAMONDS; ELECTRIC WIRE; ELECTRONIC STATES; FERMI LEVEL; FERMIONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HYDROGEN; ION EXCHANGE; OPTICAL DATA PROCESSING; OXYGEN; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; ZINC; ZINC OXIDE;

DIAMOND FILMS;

EID: 67650520047     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja710999r     Document Type: Article

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