The transition from ripples to islands in strained heteroepitaxial growth under low driving forces

Journal of Crystal Growth

Volumn 183, Issue 3, 1998, Pages 305-310

  Dorsch, W ^a   Steiner, B ^b,c   Albrecht, M ^a   Strunk, H P ^a   Wawra, H ^b   Wagner, G ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c SPECS SURFACE NANO ANALYSIS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MORPHOLOGY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING INDIUM; STRESS RELAXATION;

SURFACE RIPPLES;

EPITAXIAL GROWTH;

EID: 0032472137     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00430-2     Document Type: Article

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