Kinetics of Ta ions penetration into porous low- k dielectrics under bias-temperature stress

Applied Physics Letters

Volumn 96, Issue 22, 2010, Pages

  He, Ming ^a   Ou, Ya ^a   Wang, Pei I ^a   Lu, Toh Ming ^a  

^a Rensselaer Polytechnic Institute   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS-TEMPERATURE STRESS; DIFFUSIVITIES; FLAT-BAND VOLTAGE SHIFT; INTERCONNECTED PORES; ION DIFFUSION; LOW K DIELECTRICS; MSQ FILMS; POROUS LOW-K DIELECTRICS;

ACTIVATION ENERGY; DIFFUSION; IONS;

TANTALUM;

EID: 77953565280     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3442485     Document Type: Article

References (16)

1. A. Mallikarjunan, S. P. Murarka, and T. M. Lu, Appl. Phys. Lett. APPLAB 0003-6951 79, 1855 (2001). 10.1063/1.1404408
2. P. I. Wang, J. S. Juneja, Y. Ou, T. M. Lu, and S. S. Greg, J. Electrochem. Soc. JESOAN 0013-4651 155, H53 (2008). 10.1149/1.2806030
3. T. L. Tan, C. L. Gan, A. Y. Du, and C. K. Cheng, J. Appl. Phys. JAPIAU 0021-8979 106, 043517 (2009). 10.1063/1.3202387
4. Y. Ou, P. I. Wang, M. He, T. M. Lu, P. Leung, and T. A. Spooner, J. Electrochem. Soc. JESOAN 0013-4651 155, G283 (2008). 10.1149/1.2992125
5. R. Tsu, J. W. McPherson, and W. R. McKee, Proceedings of the IEEE International Reliability Physics Symposium (IEEE, San Jose, 2000), p. 348
6. A. L. S. Loke, J. T. Wetzel, P. H. Townsend, T. Tanabe, R. N. Vrtis, M. P. Zussman, D. Kumar, C. Ryu, and S. S. Wong, IEEE Trans. Electron Devices IETDAI 0018-9383 46, 2178 (1999). 10.1109/16.796294 (Pubitemid 32081611)
7. I. Fisher and M. Eizenberg, Thin Solid Films THSFAP 0040-6090 516, 4111 (2008). 10.1016/j.tsf.2007.10.011 (Pubitemid 351381154)
8. B. G. Willis and D. V. Lang, Thin Solid Films THSFAP 0040-6090 467, 284 (2004). 10.1016/j.tsf.2004.04.028
9. K. -L. Fang and B. -Y. Tsui, J. Appl. Phys. JAPIAU 0021-8979 93, 5546 (2003). 10.1063/1.1563292
10. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 223.
11. J. D. McBrayer, R. M. Swanson, and T. W. Sigmon, J. Electrochem. Soc. JESOAN 0013-4651 133, 1242 (1986). 10.1149/1.2108827
12. T. M. Lu, Y. Ou, and P. I. Wang, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172 990, B09-05 (2007).
13. A. L. S. Loke, R. Changsup, C. P. Yue, J. S. H. Cho, and S. S. Wong, IEEE Trans. Electron Devices IETDAI 0018-9383 17, 549 (1996). 10.1109/55.545766
14. H. Cui, I. B. Bhat, S. P. Murarka, H. Lu, W. -J. Hsia, and W. Catabay, J. Vac. Sci. Technol. B JVTBD9 1071-1023 20, 1987 (2002). 10.1116/1.1503779 (Pubitemid 35354106)
15. K. -S. Kim, Y. -C. Joo, K. -B. Kim, and J. -Y. Kwon, J. Appl. Phys. JAPIAU 0021-8979 100, 063517 (2006). 10.1063/1.2353891 (Pubitemid 44496101)
16. A. S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967), p. 37.