Effect of Ta migration from sidewall barrier on leakage current in Cu/SiOCH low- k dielectrics

Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

  Tan, T L ^a,b   Gan, C L ^a   Du, A Y ^b   Cheng, C K ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED ELECTRIC FIELD; CONSTANT VOLTAGE STRESS; CURRENT VOLTAGE; LOW K DIELECTRICS; VOLTAGE RAMP;

DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRIC POTENTIAL;

TANTALUM;

EID: 69749091288     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3202387     Document Type: Article

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