Growth kinetics and polysilicon formation by aluminium-induced crystallization on glass-ceramic substrates

Applied Physics A: Materials Science and Processing

Volumn 99, Issue 1, 2010, Pages 53-61

  Tuzun O ^a,b   Slaoui, A ^a   Maurice, C ^c   Vallon, S ^d  

^a Faculté de Médecine   (France)

^b MUGLA SITKI KOCMAN UNIVERSITY   (Turkey)

^c LCG   (France)

^d Corning European Technology Center ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; ALUMINIUM-INDUCED CRYSTALLIZATION; AMORPHOUS SILICON (A-SI); ANNEALING CONDITION; AVERAGE GRAIN SIZE; CRYSTALLINE QUALITY; CRYSTALLOGRAPHIC ORIENTATIONS; ELECTRON BACKSCATTERING DIFFRACTION; HIGH TEMPERATURE; LARGE-GRAIN; MICRO RAMAN SPECTROSCOPY; NUCLEATION KINETICS; POLY-SI THIN FILM; SILICON GRAINS; THERMAL-ANNEALING;

ALUMINUM; AMORPHOUS FILMS; ANNEALING; BACKSCATTERING; CERAMIC MATERIALS; CRYSTALLIZATION; GLASS; GRAIN SIZE AND SHAPE; GROWTH KINETICS; OPTICAL MICROSCOPY; POLYSILICON; RAMAN SPECTROSCOPY; SECONDARY BATTERIES; SEMICONDUCTING SILICON COMPOUNDS;

AMORPHOUS SILICON;

EID: 77953539362     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-009-5506-6     Document Type: Article

References (22)

1. X.-Z. Bo, N. Yao, S.R. Shieh, T.S. Duffy, J.C. Sturm, J. Appl. Phys. 91, 2910 (2002).
2. T. Naguchi, Jpn. J. Appl. Phys. 32, 1584 (1993).
3. J.R. Köhler, Laser crystallization of Si and Si-Ge films, in Growth, Characterization and Electronic Application of Si-based Thin Films, Research Signpost, ed. by R.B. Bergmann (2002), p. 39.
4. S. Lee, S. Joo, IEEE Electron Dev. Lett. 17, 160 (1996).
5. S.R. Herd, P. Chaudhari, M.H. Brodsky, J. Non-Cryst. Solids 7, 309 (1972).
6. O. Nast, A. Hartmann, J. Appl. Phys. 88, 716 (2000).
7. A. Slaoui, E. Pihan, M. Rusu, in Proc. 17th EU-PVSEC (2001), p. 1462.
8. W. Wang, Y. Zhao, Y. Xu, X. Luo, M. Yu, Y. Yu, in Proc. 2nd WCPEC (1998), p. 1740.
9. S. Bourdais, F. Mazel, G. Fantozzi, A. Slaoui, Prog. Photovolt., Res. Appl. 7, 437 (1999).
10. A.G. Aberle, A. Straub, P.I. Widenborg, A.B. Sproul, Y. Huang, P. Campbell, Prog. Photovolt., Res. Appl. 13, 37 (2005).
11. O. Nast, T. Puzzer, L.M. Koschier, A.B. Sproul, S.R. Wenham, Appl. Phys. Lett. 73, 3214 (1998).
12. R. Kishore, A. Shaik, H.A. Naseem, W.D. Brown, J. Vac. Sci. Technol. B 21, 1037 (2003).
13. L.R. Pinckney, J. Non-Cryst. Solids 255, 171 (1999).
14. E. Pihan, A. Slaoui, C. Maurice, J. Cryst. Growth 305, 88 (2007).
15. J. Klein, J. Schneider, M. Muske, S. Gall, W. Fuhs, in Proc. 19th EU-PVSEC (2004), p. 1135.
16. J.C. Goldschmidt, K. Roth, N. Chuangsuwanich, A.B. Sproul, B. Vogl, A.G. Aberle, in Proc. 3rd WCPEC (2003), p. 1206.
17. E. Pihan, A. Focsa, A. Slaoui, C. Maurice, Thin Solid Films 511-512, 15 (2006).
18. A. Focsa, A. Slaoui, E. Pihan, F. Snijkers, P. Leempoel, G. Beaucarne, J. Poortmans, Thin Solid Films 511-512, 404 (2006).
19. T. Kamins, Polycrystalline Silicon for Integrated Circuits and Displays, 2nd edn. (Kluwer, Norwell, 1998), p. 110.
20. O. Nast, The aluminium-induced exchange forming polycrystalline silicon on glass for thin-film solar cells, Ph.D. thesis, Marburg/Lahn, Germany, 2000.
21. S. Gall, M. Muske, I. Sieber, O. Nast, W. Fuhs, J. Non-Cryst. Solids 299-302, 741 (2002).
22. D. Crespo, T. Pradell, N. Clavaguera, M.T. Clavaguera-Mora, Mater. Sci. Eng. A 238, 160 (1997).