Electrical and optical properties of polycrystalline silicon seed layers made on glass by solid-phase crystallisation

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1206-1209

  Goldschmidt, J C ^a   Roth, K ^a   Chuangsuwanich, N ^a   Sproul, A B ^a   Vogl, B ^a   Aberle, A G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT TRAPPING; POLY-SI CONDUCTIVITY; SEED NUCLEI; SOLID-PHASE CRYSTALLIZATION (SPC);

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; GLASS; GRAIN SIZE AND SHAPE; REFRACTIVE INDEX; SINGLE CRYSTALS; SURFACE PHENOMENA; THIN FILMS;

POLYSILICON;

EID: 6444238833     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. T. Matsuyama et al., "High-quality polycrystalline silicon thin film prepared by a solid phase crystallisation method", J. Non-Crystalline Solids 198-200, 940 (1996).
2. R. Bergmann et al., "Polycrystalline silicon on glass substrates for thin-film solar cells", Solid State Phenom. 51-52, 515 (1996).
3. R.B. Bergmann et al., "Solid-phase crystallized Si films on glass substrates for thin film solar cells", Solar Energy Mat. Solar Cells 46, 147 (1997).
4. A.G. Aberle et al., "Polycrystalline silicon on glass thin-film solar cell research at UNSW using the seed layer concept", this Conference.
5. K. Roth et al., "Structural properties of polycrystalline silicon seed layers made on glass by solid-phase crystallisation", this Conference.