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Volumn 7, Issue 6, 1999, Pages 437-447

Silicon deposition on mullite ceramic substrates for thin-film solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS; CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILM DEVICES;

EID: 0033358347     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-159X(199911/12)7:6<437::AID-PIP284>3.0.CO;2-6     Document Type: Article
Times cited : (17)

References (28)
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    • T. Y. Hsieh, K. H. Yung, D. L. Kwong and S. K. Lee, 'Silicon homoepitaxy by rapid thermal processing chemical vapor deposition (RTPCVD) - A review', Journal of the Electrochemical Society, 138(4), 1188 (1991).
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    • Hsieh, T.Y.1    Yung, K.H.2    Kwong, D.L.3    Lee, S.K.4
  • 6
    • 0017483079 scopus 로고    scopus 로고
    • Fabrication and characterization of thin-film silicon solar cells on alumina ceramic
    • T. Warabisako and T. Saitoh, 'Fabrication and characterization of thin-film silicon solar cells on alumina ceramic', IEEE Transactions on Electronic Devices, 24(4), 446 (1997).
    • (1997) IEEE Transactions on Electronic Devices , vol.24 , Issue.4 , pp. 446
    • Warabisako, T.1    Saitoh, T.2
  • 15
    • 0022936755 scopus 로고
    • Tape casting: A technique for preparing and studying new materials
    • C. Fiori and G. De Portu, 'Tape casting: A technique for preparing and studying new materials', British Ceramic Proceedings, 38, 213 (1986).
    • (1986) British Ceramic Proceedings , vol.38 , pp. 213
    • Fiori, C.1    De Portu, G.2
  • 17
    • 0003847711 scopus 로고
    • Appendix D: 'Optical Properties of Silicon at 300K', Centre for Photovoltaic Devices, UNSW, Australia
    • M. A. Green, 'Silicon Solor Cells, Advanced Principles & Practice', Appendix D: 'Optical properties of silicon at 300K', Centre for Photovoltaic Devices, UNSW, Australia, 1995.
    • (1995) Silicon Solor Cells, Advanced Principles & Practice
    • Green, M.A.1
  • 21
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    • (1994) Sunrays 1.1 Software
    • Brendel, R.1
  • 23
    • 0042673340 scopus 로고
    • The preparation and properties of chemically vapor deposited silicon on sapphire and spinel
    • G. W. Cullen, 'The preparation and properties of chemically vapor deposited silicon on sapphire and spinel', Journal of Crystal Growth, 9, 107 (1971).
    • (1971) Journal of Crystal Growth , vol.9 , pp. 107
    • Cullen, G.W.1
  • 24
    • 49649131169 scopus 로고
    • The epitaxial growth and properties of p-type silicon on spinel using a dual-rate technique
    • G. E. Gottlieb, 'The epitaxial growth and properties of p-type silicon on spinel using a dual-rate technique', Journal of Crystal Growth, 12, 237 (1972).
    • (1972) Journal of Crystal Growth , vol.12 , pp. 237
    • Gottlieb, G.E.1
  • 27
    • 0026189984 scopus 로고
    • Grain boundary barrier heights and recombination velocities in polysilicon under optical illumination
    • D. P. Joshi and D. P. Bhatt, 'Grain boundary barrier heights and recombination velocities in polysilicon under optical illumination', Solar Energy Materials and Solar Cells, 22, 137 (1991).
    • (1991) Solar Energy Materials and Solar Cells , vol.22 , pp. 137
    • Joshi, D.P.1    Bhatt, D.P.2
  • 28
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    • Low-high junction theory applied to solar cells
    • M. P. Godlewski, C. R. Baraona and H. W. Brandhorst, 'Low-high junction theory applied to solar cells', Solar Cells, 29, 131-150 (1990).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.