Poly-Si films prepared by rapid thermal CVD on boron and phosphorus silicate glass coated ceramic substrates

Thin Solid Films

Volumn 511-512, Issue , 2006, Pages 404-410

  Focsa, A ^a   Slaoui, A ^a   Pihan, E ^a   Snijkers, F ^b   Leempoel, P ^c   Beaucarne, G ^d   Poortmans, J ^d  

^a Faculté de Médecine   (France)

^b FLEMISH INSTITUTE FOR TECHNOLOGICAL RESEARCH VITO   (Belgium)

^c Dow Corning SA Belgium   (Belgium)

^d IMEC   (Belgium)

Author keywords

Ceramics; Chemical vapor deposition; Polycrystalline silicon

Indexed keywords

BOROSILICATE GLASS; CERAMIC MATERIALS; CHEMICAL VAPOR DEPOSITION; GRAIN SIZE AND SHAPE; HYDROGENATION; NUCLEATION; THIN FILMS;

CRYSTALLOGRAPHIC PROPERTIES; OPEN CIRCUIT VOLTAGE; SILICATE OXIDE LAYERS; SILICON DEPOSITION;

POLYSILICON;

EID: 33747391861     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.113     Document Type: Article

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