Assessing out-of-band flare effects at the wafer level for EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  George, Simi A ^a   Naulleau, Patrick P ^a   Kemp, Charles D ^a   Denham, Paul E ^a   Rekawa, Senajith ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

aerial image modeling; blur on patterns; EUVL; flare; out of band; resists

Indexed keywords

AERIAL IMAGES; EUV LITHOGRAPHY; FIELD EXPOSURE; IN-VACUUM; LINE EDGE ROUGHNESS; MASK PATTERNS; OUT-OF-BAND; PROCESS PERFORMANCE; SEMATECH; SENSITIVE WAVELENGTHS; SIGNIFICANT IMPACTS; SIMULATION METHODS; SIMULATION-BASED METHOD; TABLE-TOP; WAFER LEVEL;

MASKS;

EID: 77953474166     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.847953     Document Type: Conference Paper

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