Printability and inspectability of programmed pit defects on the masks in EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Kang, In Yong ^a   Seo, Hwan Seok ^a   Ahn, Byung Sup ^a   Lee, Dong Gun ^a   Kim, Dongwan ^a   Huh, Sungmin ^a,b   Koh, Cha Won ^a,b   Cha, Brian ^a,b   Kim, Seoung Sue ^a   Cho, Han Ku ^a   Mochi, Iacopo ^c   Goldberg, Kenneth ^c  

^a SAMSUNG Electronics   (South Korea)

^b SEMATECH   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

defect; EUVL; inspectability; mask; phase; pit; printability; S Litho

Indexed keywords

ABSORBER PATTERN; DEFECT COMPENSATION; DEFOCUS; EUV LITHOGRAPHY; EUVL; KEY TECHNIQUES; PATTERN SHIFTS; PHASE DEFECTS;

EXTREME ULTRAVIOLET LITHOGRAPHY; MASKS;

DEFECTS;

EID: 77953445283     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.847956     Document Type: Conference Paper

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