The lithography technology for the 32 nm HP and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Dusa, Mircea ^b   Arnold, Bill ^b   Finders, Jo ^c   Meiling, Hans ^c   Van Ingen Schenau, Koen ^c   Chen, Alek C ^a  

^a ASML Taiwan Ltd   (Taiwan)

^b ASML US Inc   (United States)

^c ASML   (Netherlands)

Author keywords

Double patterning technology (DPT); DPL; DPT CDU populations; EUV; LELE; Spacer self aligned

Indexed keywords

(E ,3E) PROCESS; (OTDR) TECHNOLOGY; EXPERIMENTAL RESULTS; FULL-FIELD; IMMERSION LITHOGRAPHY (IML); LITHOGRAPHY RESOLUTION; MASK TECHNOLOGY; NEXT-GENERATION LITHOGRAPHY (NGL); PHOTO MASKING; PROCESS CONTROL PERFORMANCE; RESOLUTION CAPABILITY; SACRIFICIAL LAYERS; SIDE WALLS; WATER-BASED;

COMPUTER NETWORKS; CONTROL THEORY; IMAGE RESOLUTION; MULTITASKING; PRODUCTION CONTROL; TECHNOLOGY; TITRATION; ULTRAVIOLET DEVICES;

LITHOGRAPHY;

EID: 45549083621     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.796016     Document Type: Conference Paper

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