Physical resist models and their calibration: Their readiness for accurate EUV lithography simulation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Klostermann, U K ^a   Mulders T ^a   Schmoller T ^a   Lorusso, G F ^b   Hendrickx, E ^b  

^a IMEC ^*  (Germany)

^b IMEC   (Belgium)

Author keywords

CD uniformity; EUV; lithography simulation; model validation; OPC; resist calibration; S Litho; Sentaurus Lithography

Indexed keywords

3D MASK EFFECTS; CALIBRATED MODEL; CALIBRATION PATTERNS; CD UNIFORMITY; CROSS-SECTIONAL SEM; DATA SERIES; DATA SETS; END-OF-LINE; EUV; EUV LITHOGRAPHY SIMULATION; EUV RESISTS; FEATURE SIZES; LITHOGRAPHY SIMULATION; MASK METROLOGY; MEASUREMENT DATA; MODEL CALIBRATION; ONE-DIMENSIONAL STRUCTURE; PREDICTIVE ACCURACY; PROCESS CONDITION; PROCESS WINDOW; RESIST MODELS; SHIN-ETSU; SIDEWALL ANGLES;

CALIBRATION; COMPUTER SIMULATION; DATA STORAGE EQUIPMENT; MODELS; PHOTORESISTS;

LITHOGRAPHY;

EID: 77953400984     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846549     Document Type: Conference Paper

References (7)

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2. Bienert, M. et al. , "Imaging budgets for EUV optics: Ready for 22 nm node and beyond," Proc. of SPIE Vol. 7271, 72711B-1 (2009)
3. Sentaurus Lithography, EUV Module, Release C-2009.09; IC WorkBench, release B-2008.12 SP2-5; Synopsys Inc., Mountain View, California, USA.
4. Klostermann, U. K. et al. , "Calibration of physical resist models: methods, usability, and predictive power," J. Micro/Nanolith. MEMS and MOEMS, 8(3), 033005 (2009)
5. CXRO website: http://www-cxro.lbl.gov/
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