Investigation of EUV mask defectivity via full-field printing and inspection on wafer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7379, Issue , 2009, Pages

  Jonckheere, Rik ^a   Van Den Heuvel, Dieter ^a   Iwamoto, Fumio ^a   Stepanenko, Nickolay ^b   Myers, Alan ^b   Lamantia, Matt ^b   Goethals, Anne Marie ^a   Hendrickx, Eric ^a   Ronse, Kurt ^a  

^a IMEC   (Belgium)

^b Qimonda ^*  (Germany)

Author keywords

Defectivity; EUV lithography; EUV reticle; Full field; Multilayer defects

Indexed keywords

DEFECTIVITY; EUV LITHOGRAPHY; EUV RETICLE; FULL FIELD; MULTILAYER DEFECTS;

EXTREME ULTRAVIOLET LITHOGRAPHY; INSPECTION; MASKS; MULTILAYERS; OPTICAL INSTRUMENTS; PARAMETER ESTIMATION; PRINTING; ULTRAVIOLET DEVICES;

DEFECTS;

EID: 69949169980     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.824268     Document Type: Conference Paper

References (7)

1. EUVL Symposium 2008, closing remarks, 1 October 2008, Lake Tahoe
2. R. Jonckheere et al, "Mask defect printability in Full Field EUV Lithography - Part 1", EUVL Symposium, 31 October 2007, Sapporo
3. R. Jonckheere et al, "Mask defect printability in Full Field EUV Lithography - Part 2", EUVL Symposium, 1 October 2008, Lake Tahoe
4. Y. Tezuka et al, "EUV exposure experiment using programmed multilayer defects for refining printability simulation", Proc. SPIE Vol. 6517, 65170E-1, 2007
5. K. Cummings et al, "An Investigation of EUV Lithography Defectivity", Proc. SPIE Vol. 7122, 2008
6. A. Tchikoulaeva et al, "EUVL Reticle Defectivity Evaluation", Proc. SPIE Vol. 7271, 2009 (in press)
7. EUVL mask standard WG meeting, Lake Tahoe, 1 September 2008