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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7470, Issue , 2009, Pages

EUV actinic defect inspection and defect printability at the sub-32 nm half-pitch

(8) Huh, Sungmin a Kearney, Patrick a Wurm, Stefan a Goodwin, Frank a Han, Hakseung b Goldberg, Kenneth c Mochi, Iacopo c Gullikson, Eric c

a SEMATECH (United States)

b SAMSUNG Electronics (South Korea)

c LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

Actinic inspection; DUV inspection; EUV; Mask; Phase defect

Indexed keywords

ACTINIC INSPECTION; COST OF OWNERSHIP; DEFECT INSPECTION; DEFECT PRINTABILITY; DEFECT SENSITIVITY; DUV INSPECTION; EUV; EUV MASK BLANKS; EXTREME ULTRAVIOLET MASKS; INSPECTION TOOLS; MASK BLANK; MASK BLANK DEVELOPMENT CENTERS; MASS PRODUCTION; MULTILAYER DEFECTS; PHASE DEFECT; PHASE DEFECTS; PITCH TECHNOLOGY; SEMATECH;

EXTREME ULTRAVIOLET LITHOGRAPHY; INSPECTION; INSPECTION EQUIPMENT; MACHINE TOOLS; OPTICAL INSTRUMENTS; PHOTOMASKS; ULTRAVIOLET DEVICES;

DEFECTS;

EID: 69949120182 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.835196 Document Type: Conference Paper

Times cited : (8)

References (6)

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2
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6
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