Integrated barrier/plug fill schemes for high aspect ratio Gb DRAM contact metallization

Thin Solid Films

Volumn 320, Issue 1, 1998, Pages 73-76

  Chen, Yu Pei ^a   Dixit, Girish A ^a   Lu, Jiong Ping ^a   Hsu, Wei Yung ^a   Konecni, Anthony J ^a   Luttmer, J D ^a   Havemann, Robert H ^a  

^a Semiconduct Proc and Device Center   (United States)

Author keywords

Contact; CVD Ti and TiN; Gb DRAM; Interconnect; Ion metal plasma Ti; Metallization

Indexed keywords

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA APPLICATIONS; TITANIUM; TITANIUM NITRIDE;

CONTACT RESISTANCE; DRAM; ION METAL PLASMA; PHYSICAL VAPOR DEPOSITION; TITANIUM SILICIDE;

ELECTRIC CONTACTS;

EID: 0032482040     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01068-7     Document Type: Article

References (4)

1. J.P. Lu, W.Y. Hsu, Q.Z. Hong, G.A. Dixit, J.D. Luttmer, R.H. Havemann, L.K. Magel, Advanced Metallization for ULSI Applications in 1996, Materials Research Society Conference Proceedings, 1996, p. 269.
2. C. Arena, J. Faguet, R.F. Foster, J.T. Hillman, F. Martin, Y. Morand, Advanced Metallization for ULSI Applications in 1994, Materials Research Society Conference Proceedings, 1994, p. 259.
3. M.S. Ameen, J.T. Hillman, J. Fauget, R.F. Foster, C. Arena, F. Martin, Advanced Metallization for ULSI Applications in 1994, Materials Research Society Conference Proceedings, 1994, p. 269.
4. G.A. Dixit, W.Y. Hsu, A.J. Konecni, S. Krishnan, J.D. Luttmer, R.H. Havemann, J. Forster, G.D. Yao, M. Narasimhan, Z. Xu, S. Ramaswami, F.S. Chen, J. Nulman, IEDM, 1996, p. 357.