Improved reliability and ESD characteristics of flip-chip GaN-based LEDs with internal inverse-parallel protection diodes

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 346-349

  Shei, Shih Chang ^a   Sheu, Jinn Kong ^b   Shen, Chien Fu ^b  

^a NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Electrostatic discharge (ESD) and human body model; InGaN; Light emitting diodes (LEDs); Multiquantum well

Indexed keywords

ELECTROSTATIC DISCHARGE; FLIP CHIP DEVICES; GALLIUM NITRIDE; HUMAN FORM MODELS; RELIABILITY; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS;

INTERNAL INVERSE-PARALLEL PROTECTION DIODES;

LIGHT EMITTING DIODES;

EID: 34247604071     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895428     Document Type: Article

References (9)

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