Capacitance-voltage (CV) characterization of gaas-oxide interfaces

ECS Transactions

Volumn 16, Issue 5, 2009, Pages 507-519

  Brammertz, G ^a   Lin, H C ^b   Martens, K ^a   Mercier, D ^a   Merckling, C ^a   Penaud, J ^c   Adelmann, C ^a   Sioncke, S ^a   Wang, W E ^a   Caymax, M ^a   Meuris, M ^d   Heyns, M ^a,c  

^a IMEC   (Belgium)

^b PURDUE UNIVERSITY   (United States)

^c RIBER SA   (France)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DESCALING; DIELECTRIC DEVICES; ELECTRON TRAPS; GALLIUM ARSENIDE; GATE DIELECTRICS; HIGH-K DIELECTRIC; HOLE TRAPS; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE;

C-V CHARACTERIZATION; CAPACITANCE VOLTAGE; CHARACTERISTIC EMISSION; CHARGE CARRIER TRAPPING; HIGH TEMPERATURE; MEASUREMENTS OF; MOS CHARACTERIZATION; SUBSTRATE TEMPERATURE;

INTERFACE STATES;

EID: 63149158714     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2981632     Document Type: Conference Paper

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