Low-pressure MOCVD of Al2O3 films using aluminium acetylacetonate as precursor: Nucleation and growth

Surface and Coatings Technology

Volumn 161, Issue 2-3, 2002, Pages 135-143

  Singh, M P ^a   Shivashankar, S A ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Aluminium oxide; CVD; Growth; Nucleation; Thin film

Indexed keywords

ALUMINUM COMPOUNDS; CARBIDES; COATING TECHNIQUES; LOW TEMPERATURE EFFECTS; MELTING; MOLECULES; MORPHOLOGY; PRESSURE EFFECTS; SECONDARY ION MASS SPECTROMETRY; STAINLESS STEEL; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

MELTING CLUSTERS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

ALUMINUM OXIDE; CHEMICAL VAPOR DEPOSITION; COATING; DEPOSITION; FILM;

EID: 0037010630     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(02)00470-X     Document Type: Article

References (17)