Ultrahigh-quality single crystals of silicon carbide by alternate repetition of growth perpendicular to c-axis

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 139-141

  Nakamura, Daisuke ^a  

^a Rd Management Section   (Japan)

Author keywords

Bulk growth; Dislocation; Lattice distortion; Silicon carbide; Single crystal

Indexed keywords

DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; SINGLE CRYSTALS; X RAY ANALYSIS;

BULK GROWTH; LATTICE DISTORTION; SEED SURFACE;

SILICON CARBIDE;

EID: 30344472979     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.039     Document Type: Conference Paper

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